| 1971 |
Organometallics
R&D start |
| 1981 |
MOCVD Research
start
high electron mobility GaAs (163,000cm2/Vs@77K) |
| 1984 |
Epitronics
founded |
| 1989 |
AlGaAs/InGaAs
p-HEMT R&D |
| 1991 |
O2-doped
AlGaAs buffer FET Technology
(Tsukuba Laboratory) |
| 1992 |
Development of
MOCVD system for GaAs Production |
| |
GaN LED
R&D start |
| |
InGaP
HBT R&D (Epitronics) |
| 1995 |
AlGaAs HBT
R&D |
| |
High Brightness
LED R&D, 1cd GaN epiwafer |
| |
Development of
MOCVD system for GaN Production |
| |
ATMI
acquires Epitronics |
| 1998 |
p-HEMT &
HB-LED Production start |
| |
InGaP-HBT
Production start |
| 2001 |
ATMI
expands into Airport facility |
| 2003 |
Acquired
the assets of ATMI GaAs Epitaxy Division |
| 2004 |
Sumika receives
ISO9001:2000
certification |
| |
Veeco
equipment acquisition |
| 2005 |
Sumika
expands p-HEMT epiwafer production |
| 2007 |
Additional
reactors installed (1 Aixtron 2600G3 and
1 Veeco E450) |
| 2008 |
Sumika
receives ISO14001:2004 certification |
| 2009 |
Additional
reactor installed, Aixtron 2600G3 |
| 2010 |
Sumika
receives Quality Assurance Certificate from Panasonic Corporation |
