| 1971 | Organometallics R&D start |
| 1981 | MOCVD Research start
high electron mobility GaAs (163,000cm2/Vs@77K) |
| 1984 | Epitronics founded |
| 1989 | AlGaAs/InGaAs p-HEMT R&D |
| 1991 | O2-doped AlGaAs buffer FET Technology
(Tsukuba Laboratory) |
| 1992 | Development of MOCVD system for GaAs Production |
| | GaN LED R&D start |
| | InGaP HBT R&D (Epitronics) |
| 1995 | AlGaAs HBT R&D |
| | High Brightness LED R&D, 1cd GaN epiwafer |
| | Development of MOCVD system for GaN Production |
| | ATMI acquires Epitronics |
| 1998 | p-HEMT & HB-LED Production start |
| | InGaP-HBT Production start |
| 2001 | ATMI expands into Airport facility |
| 2003 | Acquired the assets of ATMI GaAs Epitaxy Division |
